German company BASF, the world’s largest chemical manufacturer, has developed polyphthalamide (PPA) for use in next-generation insulated-gate bipolar transistor (IGBT) semiconductor packages for power electronics.
Ultramid Advanced N3U41 G6 is designed to meet the growing demand for high-performance and reliable electronic components in electric vehicles, high-speed trains, smart manufacturing and renewable energy generation.
These applications require materials that can withstand higher temperatures, provide continuous electrical insulation, and maintain dimensional stability in harsh environmental conditions such as humidity, dust, and dirt.
The laser-sensitive Ultramid Advanced N3U41G6 uses a halogen-free flame retardant that combines high thermal stability, low water absorption and excellent electrical properties. According to the company, it has a relative creepage index (CTI) of up to 600 and supports IGBT miniaturization by reducing creepage paths and improving insulation compared to materials currently used for power switches. UL ratings specify an electrical relative temperature index (RTI) value of 150°C.
In IGBT manufacturing, PPA is compatible with encapsulating materials used after injection molding to assemble the semiconductor with metal pins and clamps.
Jochen Seubert, Senior Application Specialist Power Electronics at BASF, said: “BASF PPA composites are available worldwide and samples are already available. With our customer-focused technical support in the development, we expect this material to contribute to the development of power electronics.”
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Post time: Nov-19-2024