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From left to right: Makan Chen, Vice President of Sales and Business Development, Dr. Rainer Kaesmeier, Managing Director of the Semiconductor Division; Tobias Keller, VP Global Product Management and Marketing, Luca De Michielis, Head of BiMOS Chip R&D, Roc Blumenthal, Low; Global IGBT Voltage Project Manager
Hitachi Energy has made a breakthrough in power semiconductor technology with the release of wafers with a diameter of 300 mm. This innovation improves chip performance and complexity in 1200-V insulated gate bipolar transistors (IGBTs), a type of power semiconductor device that turns power on and off quickly in high-power applications. IGBT applications include variable frequency drives (VFDs), uninterruptible power supply (UPS) systems, electric vehicles, trains, and air conditioners.
Larger wafers offer numerous benefits, including the ability to more than double (2.4 times) the number of functional integrated circuits per wafer compared to existing 200mm wafers, resulting in significant cost savings. It uses the latest fine-grained trench IGBT design to achieve energy-efficient power conversion and control and minimize power loss during operation.
The development of 300mm wafers is critical to accelerating the energy transition and more efficient use of resources in renewable energy and industry. “It’s impressive how smooth and fast the implementation of 300mm wafers has been. The team’s success not only advances Hitachi Energy’s semiconductor technologies, but also provides our customers with increased competitiveness and productivity. In the future, we plan to expand our platform to support 300mm wafers. Higher voltage IGBTs,” said Dr. Rainer Keesmeier, managing director of Hitachi Energy’s semiconductor business.
Hitachi Energy’s semiconductor experts achieved this milestone through close collaboration with cross-functional teams, including product management, business development, R&D, and chip manufacturing partners.
Hitachi Energy is paving the way to a more efficient and sustainable future by constantly pushing boundaries and seeking new solutions. The new 300mm IGBT demonstrates the company’s commitment to driving social innovation in the emerging energy sector.
Post time: Jul-15-2024