Chinese power semiconductor supplier Byinka has announced shipments of its seventh generation insulated gate bipolar transistors (IGBTs) to leading companies in the electric vehicle (EV), photovoltaic (PV) and energy storage sectors. This development marks an important step in China’s efforts to close the technology gap between IGBT technology and Japanese and European companies.
Byinka CEO He Lin told Jiwei that their seventh generation IGBTs have been tested and produced in small batches, and the feedback has been good. Some performance indicators are reported to be better than leading international brands, and the company’s products have already entered the large-scale delivery stage.
The seventh generation IGBT developed by Byinka has higher power density, simpler control circuitry and a wider safe operating area (SOA). It can be manufactured using a 50nm process and represents a significant technological advance.
Binka takes a measured approach to the automotive IGBT market. Recognizing the importance of achieving automotive grade certification for seventh generation IGBT technology, they are strategically focused primarily on strengthening their position in the industrial control and photovoltaic systems sectors. This approach allows them to improve their technology and build a strong reputation before entering the demanding automotive market.
Lin noted that while oversupply has led to intense competition in the mid- and low-end IGBT space, demand for high-end devices is growing. According to Jiwei, the energy storage IGBT market growth rate is expected to exceed that of the automotive industry in the next few years, with the market share reaching 9.7% by 2025. It is worth noting that China is the dominant player in the global IGBT market and its consumption will exceed that of the automotive industry. This share is expected to continue to grow as it accounts for more than 40% of global demand.
Byinka was founded in 2022 and successfully developed an independently developed seventh generation IGBT using 300mm wafers in July 2023. Since then, the company has launched a full range of seventh generation IGBT products ranging from 1000 to 1700 V.
According to statistics from DIGITIMES Research, although the world’s leading companies Infineon and Fuji Electric developed the seventh generation IGBT in 2018, the IGBT technology of most Chinese companies is still stuck at the fifth or sixth generation level, lagging behind by at least five years. . However, the vast domestic market is expected to strongly support Chinese companies’ earnings growth.
In recent years, other Chinese semiconductor companies have also made great progress in developing seventh generation IGBTs. StarPower Semiconductor released its products in 2022, and MACMIC released its seventh generation IGBT in 2023, both using 300mm wafers.
Post time: Oct-23-2024